Robert P. Devaty


211 Allen
(412) 624-9009
Associate Professor


Dr. Devaty's research focuses on the large bandgap semiconductors SiC, AlN, GaN and their alloys, heterostructures and superlattices. His interests include infrared reflectance, low temperature photoluminescence, magneto–optical spectroscopy, SiC Schottky barriers, carrier lifetime measurements, and shallow impurities and deep centers in SiC. In recent years porous SiC has been a topic of special interest. Potential applications include biosensors, bone tissue engineering, fuel cells, and substrates for defect reduction in epitaxial films. The group also participates in collaborations to investigate the oxide/SiC interface based on the large interfacial area of porous SiC and the propagation of bulk and surface acoustic waves in porous SiC.

Selected Publications

  • "Fabrication and morphology of porous p-type SiC," Y. Shishkin, Y. Ke, R.P. Devaty and W.J. Choyke, J. Appl. Phys. 97, 044908 (2005).
  • "Determination of the electric field in 4H/3C/4H-SiC quantum wells due to spontaneous polarization in the 4H SiC matrix," S. Bai, R.P. Devaty, W.J. Choyke, U. Kaiser, G. Wagner and M.F. MacMillan, Appl. Phys. Lett. 83, 3171 (2003).
  • "Anharmonicity of the C-H stretch mode in SiC: Unambiguous identification of hydrogen-silicon vacancy defect," A. Gali, B. Aradi, D. Heringer, W.J. Choyke, R.P. Devaty and S. Bai, Appl. Phys. Lett. 80, 237 (2002).
  • "Neutral aluminum and gallium four particle complexes in silicon carbide polytypes," R.P. Devaty, W.J. Choyke, S.G. Sridhara and L.L. Clemen, Mat. Sci. Eng. B 61-62, 187-196 (1999).
  • "Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T," G. Rutsch, R.P. Devaty, W.J. Choyke, D.W. Langer and L.B. Rowland, J. Appl. Phys. 84, 2062 (1998).